APT801R4BNR-GULLWING datasheet

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• Маркировка
  APT801R4BNR-GULLWING
• Производитель
  Microsemi Corporation
• Описание
  Microsemi Corporation APT801R4BNR-GULLWING Mfr Package Description: TO-247, 3 PIN Package Shape: RECTANGULAR Package Style: FLANGE MOUNT Surface Mount: Yes Terminal Form: GULL WING Terminal Position: SINGLE Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE WITH BUILT-IN DIODE Case Connection: DRAIN Number of Elements: 1 Transistor Element Material: SILICON Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: ENHANCEMENT Transistor Type: GENERAL PURPOSE POWER Drain Current-Max (ID): 8.5 A DS Breakdown Voltage-Min: 800 V Avalanche Energy Rating (Eas): 800 mJ Drain-source On Resistance-Max: 1.4 ohm Pulsed Drain Current-Max (IDM): 34 A
• Количество страниц
  2 шт.
• Формат
  PDF

  (Для просмотра требуется Adobe Acrobat Reader)
• Размер файла
  83,40 KB

APT801R4BNR-GULLWING datasheet скачать

APT801R4BNR-GULLWING datasheet